4
RF Device Data
Freescale Semiconductor
MRF7S27130HR3 MRF7S27130HSR3
Figure 1. MRF7S27130HR3(HSR3) Test Circuit Schematic
Z11 0.251″
x 0.084″
Microstrip
Z12 0.160″
x 0.162″
Microstrip
Z13 0.566″
x 0.084″
Microstrip
Z14 0.059″
x 0.084″
Microstrip
Z15 0.080″
x 0.123″
Microstrip
Z16 0.583″
x 0.084″
Microstrip
Z17* 0.950″
x 0.100″
Microstrip
Z18, Z19* 0.560″
x 0.100″
Microstrip
PCB Taconic TLX8--0300, 0.030″,
εr
=2.55
* Variable for tuning
Z1 0.320″
x 0.084″
Microstrip
Z2 0.380″
x 0.240″
Microstrip
Z3 0.046″
x 0.084″
Microstrip
Z4 0.273″
x 0.084″
Microstrip
Z5 0.360″
x 0.600″
Microstrip
Z6 0.260″
x 0.394″
Microstrip
Z7 0.145″
x 0.922″
Microstrip
Z8 0.455″
x 0.922″
Microstrip
Z9 0.106″
x 0.716″
Microstrip
Z10 0.413″
x 0.716″
Microstrip
VBIAS
VSUPPLY
RF
Z16
OUTPUT
RF
INPUT
DUT
C2
C3
R1
Z1
Z2
Z3
Z4
C1
Z10
Z5
R2
Z17
Z8
Z11
Z12
Z13
Z14
Z15
Z6
C13
Z9
Z18
C4
C7
C8
C12
Z19
C5
C11
C9
+
R3
Z7
C6
C10
Table 5. MRF7S27130HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
2 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C2, C6, C7, C8, C9, C10, C11
10
μF, 50 V Chip Capacitors
C5750X5R1H106M
TDK
C3
3 pF Chip Capacitor
ATC100B3R0BT500XT
ATC
C4, C5
3.6 pF Chip Capacitors
ATC100B3R6BT500XT
ATC
C12
470
μF, 63 V Electrolytic Capacitor, Radial
EKME630ELL471MK255
Multicomp
C13
5.6 pF Chip Capacitor
ATC100B5R6BT500XT
ATC
R1, R2
2K?, 1/4 W Chip Resistors
CRCW12062001FKEA
Vishay
R3
10
?, 1/4 W Chip Resistor
CRCW120610R1FKEA
Vishay
相关PDF资料
MRF7S35015HSR5 MOSFET RF N-CH 15W NI-400S-240
MRF7S35120HSR5 MOSFET RF N-CH 120W NI-780S
MRF7S38010HSR5 MOSFET RF N-CH 2W 30V NI-400S
MRF7S38040HSR5 MOSFET RF N-CH 8W 30V NI-400S
MRF7S38075HSR5 MOSFET RF N-CH 12W 30V NI-780S
MRF8P18265HSR6 FET RF N-CH 1840MHZ 30V NI1230S8
MRF8P20100HSR3 FET RF N-CH 2025MHZ 28V NI780H-4
MRF8P20140WHSR3 FET RF LDMOS 28V 500MA NI780S-4
相关代理商/技术参数
MRF7S35015HSR3 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S35015HSR3_11 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF7S35015HSR5 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S35120HSR3 功能描述:射频MOSFET电源晶体管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S35120HSR5 功能描述:射频MOSFET电源晶体管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S38010H 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S38010HR3 功能描述:射频MOSFET电源晶体管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S38010HR5 功能描述:射频MOSFET电源晶体管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray